Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

195A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

341W Tc

Turn Off Delay Time  

97 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2009

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

341W

Case Connection  

DRAIN

Turn On Delay Time  

65 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.7m Ω @ 195A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

10315pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

162nC @ 4.5V

Rise Time  

827ns

Vgs (Max)  

±20V

Fall Time (Typ)  

355 ns

Continuous Drain Current (ID)  

327A

Threshold Voltage  

2.5V

JEDEC-95 Code  

TO-247AC

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

195A

Drain-source On Resistance-Max  

0.0017Ohm

Drain to Source Breakdown Voltage  

40V

Avalanche Energy Rating (Eas)  

224 mJ

Height  

20.7mm

Length  

15.87mm

Width  

5.3086mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant